Wide Bandgap Semiconductors for Power Electronics
Materials, Devices, Applications
Wide Bandgap Semiconductors for Power Electronics
Materials, Devices, Applications
The book gives a comprehensive overview the wide bandgap materials SiC, GaN, C (diamond) and Ga(III) oxide, covering in detail the growth of these materials, their characterization and their use in a variety of power electronics devices.
Introduction<br> <br>PART I. SILICON CARBIDE (SiC)<br>Bulk Growth of hex-SiC<br>Industrial Perspectives on hex-SiC Bulk Growth<br>CVD Epitaxy of hex-SiC<br>Industrial Perspective on CVD Epitaxy of hex-SiC<br>Bulk and Epitaxial Growth of c-SiC<br>Intrinsic Defects in SiC<br>Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using X-Ray Techniques<br>Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using Photoluminescence and Two-Photon Absorption Microscopy<br>Theoretical Approaches to Understanding Evolution and Propagation of Dislocations in SiC<br>MOS Gate Oxide Interface Defects in SiC<br>SiC-Graphene Interfaces<br>Device Processing Using c-SiC and hex-SiC<br>Unipolar SiC Devices<br>Bipolar SiC Devices<br>Reliability of SiC Devices<br>Industrial Systems Using SiC Circuits<br>Hybrid Electric Vehicles and Electric Vehicles Applications of SiC<br>Novel Applications of SiC in Quantum Information<br> <br>PART II. GALLIUM NITRIDE (GaN), DIAMOND, AND Ga2O3<br>Ammonothermal and HVPE Bulk Growth of GaN<br>GaN on Si<br>HPSG and CVD Growth of Diamond<br>Diamond Epitaxy and Device Processing<br>Epitaxial Growth of Beta-Ga2O3<br>
Wellmann, Peter
Ohtani, Noboru
Rupp, Roland
| ISBN | 9783527346714 |
|---|---|
| Artikelnummer | 9783527346714 |
| Medientyp | Buch |
| Auflage | 1. Auflage |
| Copyrightjahr | 2021 |
| Verlag | Wiley-VCH |
| Umfang | 736 Seiten |
| Abbildungen | 150 SW-Abb., 100 Farbabb. |
| Sprache | Englisch |
