Wide Bandgap Semiconductors for Power Electronics
Materials, Devices, Applications
Wide Bandgap Semiconductors for Power Electronics
Materials, Devices, Applications
The book gives a comprehensive overview the wide bandgap materials SiC, GaN, C (diamond) and Ga(III) oxide, covering in detail the growth of these materials, their characterization and their use in a variety of power electronics devices.
Introduction
Introduction
PART I. SILICON CARBIDE (SiC)
Bulk Growth of hex-SiC
Industrial Perspectives on hex-SiC Bulk Growth
CVD Epitaxy of hex-SiC
Industrial Perspective on CVD Epitaxy of hex-SiC
Bulk and Epitaxial Growth of c-SiC
Intrinsic Defects in SiC
Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using X-Ray Techniques
Dislocations in SiC Bulk Wafers and Epitaxial Layers: Characterization Using Photoluminescence and Two-Photon Absorption Microscopy
Theoretical Approaches to Understanding Evolution and Propagation of Dislocations in SiC
MOS Gate Oxide Interface Defects in SiC
SiC-Graphene Interfaces
Device Processing Using c-SiC and hex-SiC
Unipolar SiC Devices
Bipolar SiC Devices
Reliability of SiC Devices
Industrial Systems Using SiC Circuits
Hybrid Electric Vehicles and Electric Vehicles Applications of SiC
Novel Applications of SiC in Quantum Information
PART II. GALLIUM NITRIDE (GaN), DIAMOND, AND Ga2O3
Ammonothermal and HVPE Bulk Growth of GaN
GaN on Si
HPSG and CVD Growth of Diamond
Diamond Epitaxy and Device Processing
Epitaxial Growth of Beta-Ga2O3
Wellmann, Peter
Ohtani, Noboru
Rupp, Roland
| ISBN | 9783527346714 |
|---|---|
| Artikelnummer | 9783527346714 |
| Medientyp | Buch |
| Auflage | 1. Auflage |
| Copyrightjahr | 2021 |
| Verlag | Wiley-VCH |
| Umfang | 736 Seiten |
| Abbildungen | 150 SW-Abb., 100 Farbabb. |
| Sprache | Englisch |
