A guide to the field of wide bandgap semiconductor technology

Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles.

The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers.

This important book:

• Presents a review of wide bandgap materials and recent developments
• Links the high potential of wide bandgap semiconductors with the technological implementation capabilities
• Offers a unique combination of academic and industrial perspectives
• Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner

Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

Peter Wellmann, PhD is Professor at the University of Erlangen-Nuremberg, Department of Materials for Electronics and Energy Technology, Germany.

Noboru Ohtani, PhD, is Professor at the School of Engineering and Director of the R&D Center for SiC Materials and Processes at Kwansei Gakuin University, Hyogo, Japan.

Roland Rupp, PhD, was Senior Principal SiC Technology at Infineon AG in Munich, Germany, where he has built up and coordinated the development of SiC technology for power applications.